Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes on Substrate by Europium Oxide
نویسندگان
چکیده
منابع مشابه
Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes on Substrate by Europium Oxide
In this paper, we have demonstrated that europium oxide (Eu(2)O(3)) is a new type of active catalyst for single-walled carbon nanotubes (SWNTs) growth under suitable conditions. Both random SWNT networks and horizontally aligned SWNT arrays are efficiently grown on silicon wafers. The density of the SWNT arrays can be altered by the CVD conditions. This result further provides the experimental ...
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Single-walled carbon nanotubes (SWNT) are grown by a plasma enhanced chemical vapor deposition (PECVD) method at 600 °C. The nanotubes are of high quality as characterized by microscopy, Raman spectroscopy, and electrical transport measurements. High performance field effect transistors are obtained with the PECVD nanotubes. Interestingly, electrical characterization reveals that nearly 90% of ...
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A correlation is observed between the diameters (d) of single-walled carbon nanotubes and the percentages of metallic and semiconducting tubes synthesized at 600 degrees C by plasma-assisted chemical vapor deposition. Small tubes (d approximately 1.1 nm) show semiconductor percentages that are much higher than expected for a random chirality distribution. Density functional theory calculations ...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2010
ISSN: 1931-7573,1556-276X
DOI: 10.1007/s11671-010-9679-x